Impedance Spectroscopy of SOI Structures with BOX Nanolayers and a CO+ Implanted High-Resistance Region in Silicon Substrate

Key Points

• This research aims to study the insulating properties of SOI structures with various nanolayer configurations for circuit applications.
• Utilized radio-frequency impedance spectroscopy in the 0.001–10 MHz range to assess insulating properties.
• Investigated SOI structures with buried oxide layers of SiO2 or HfO2:Al2O3 on low-resistance silicon substrates.
• Formed layers through CO+ ion implantation and rapid thermal annealing.
• The insulating properties were significantly enhanced by the nanolayer configurations tested.
• Traps within TR-HR layers showed integration potential with embedded high-resistance regions.
• Impacts on applications in microwave and radio-photonic integrated circuits were noted.