Molecular Design Toward High‐Performance Solution‐Processable Push–Pull Zinc(II) Porphyrin‐Based Resistive Memory Devices: From Binary to Ternary Memory Behavior

A series of zinc(II) porphyrin‐based donor−acceptor (D–A) decorated complexes has been designed, synthesized, characterized, and employed to fabricate solution‐processable resistive memory devices. High‐performance ternary memory devices based on these complexes have been demonstrated by the well‐separated current ratios of 1:10 3 :10 6 with the “OFF”, “ON1”, and “ON2” resistive states. A long retention time of over 20,000 s has also been achieved. Instead of using strong electron‐donating and withdrawing moieties, this work has demonstrated the utilization of weak electron‐donating and withdrawing units to realize ternary memory behaviors. Together with the photophysical, electrochemical, and computational studies, ternary memory behaviors have been assigned as originating from the charge‐trapping state of the porphyrin core and charge transfer processes associated with the D–A moieties. The present study has demonstrated the structure–property relationship of the memory devices and offers important insights as well as design strategies for the development of multilevel organic resistive memory devices.