Abstract The rational design of high‐sensitivity photoresists for extreme ultraviolet (EUV) lithography is hindered by the lack of quantitative, predictive descriptors that link material composition to EUV absorption. Here, we develop a density‐free, data‐driven approach that quantifies both elemental sensitivity and impact. We introduce elemental sensitivity descriptors, μ n and A n , to estimate how elemental doping alters the linear attenuation coefficient and absorbance without requiring density information of the target material. Furthermore, we define elemental impact Δ ϕ i to evaluate whether an element acts as a positive or negative contributor when embedded in high‐absorption compounds. We identify I, Te, In, Sn, Sb, Cs, and Bi as top candidates for EUV photoresists, while revealing the detrimental role of H and C as matrix components. This work provides a generalizable strategy for EUV photoresist design.
Liu et al. (Mon,) studied this question.