A 83.87% peak efficiency ultra-low voltage charge pump with dynamic gate-bias and forward body-bias in 22 nm FD-SOI

This brief presents an ultra-low voltage (ULV) charge pump (CP) topology with high power conversion efficiency (PCE) designed for ultra-low supply voltage, low-power on-chip applications. The proposed ULV-CP employs a combination of dynamic gate-bias (DGB) and forward body-bias (FBB) techniques with the objective of enhancing overdrive voltage and reducing conduction losses, thereby enabling operation at ultra-low voltage. A 4-stage ULV-CP has been designed and implemented in a 22-nm FD-SOI process. Measurement result shows that it can reach a peak PCE of 83.87% at a supply voltage of 0.36 V. Compared to other CP circuits, the proposed circuit outperforms in terms of PCE, maximum output power, and minimum supply voltage.