Resistive Switching Properties of Tin Oxide Film Fabricated Using Mist Chemical Vapor Deposition

Key Points

• This work focuses on examining the resistive switching properties of tin oxide films used in memristors.
• Tin oxide resistance change layer deposited using mist chemical vapor deposition (mist CVD).
• Devices tested for stable I-V curve behavior over 500 cycles.
• The device demonstrated stable I-V curve behavior across 500 cycles.
• An ON/OFF ratio of approximately 10 was achieved.
• The memristors exhibited forming-free resistive switching characteristics.