New approaches for radiation transport simulations and rate predictions of SEEs in SOTA microelectronics

Key Points

• This research discusses the application of Monte Carlo methods for improving radiation transport simulations and rate predictions of single-event effects (SEEs) in microelectronics.
• Overview of Monte Carlo methods and simulation techniques.
• Applications to understand radiation effects in microelectronics.
• Connection to the CARRE initiative for enhanced modeling.
• Emphasis on Monte Carlo methods increasing simulation accuracy.
• Highlight of the relevance to ongoing CARRE efforts in optimizing radiation predictions.