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A semi-empirical analytical model which describes the reduction of impurity-to-band activation energy in boron-doped diamond, induced by doping and compensation levels. The model’s foundation mainly lies in the broadening of the impurity band. Crucially, compensation is integrated into this framework as a key multifaceted variable accounting for electrostatic disorder and impurity band occupancy. A two-stage optimization methodology is used for the comparative analysis with available experimental data. This model serves as a robust predictive framework for the electrical characterization and design of diamond-based semiconductor devices. The model’s predictions align closely with literature data, significantly outperforming previous theoretical frameworks by capturing the influence of compensation across the entire doping range.
Alba et al. (Wed,) studied this question.