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This research investigates how scaling the gate width affects electron transport and electrical characteristics in GaN HEMTs.

June 4, 2026Applied Physics Letters0 citations

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Gate-width scaling modulates electron velocity in AlGaN/GaN HEMTs

MWMingyan Wang YYYixu Yao SHSen Huang

Key Points

This research investigates how scaling the gate width affects electron transport and electrical characteristics in GaN HEMTs.
Utilized a coupled drift-diffusion and Monte Carlo framework validated by experiments.
Analyzed devices with a fixed gate length of 0.2 μm and varying gate widths from 200 μm to 80 μm.
Measured parameters including peak electron velocity, normalized transconductance, drain current, and cutoff frequency.
Peak electron velocity (ve) increased by 10% with reduced gate width.
Higher normalized transconductance (gm) and drain current (Id) observed due to lower lattice temperature and reduced polarization Coulomb field scattering.
Maximum cutoff frequency (fT,max) experienced a slight degradation due to increased extrinsic delay.

Abstract

In this Letter, the impact of gate-width (Wg) scaling on the electron transport and electrical characteristics of GaN HEMTs is investigated using an experiment-validated coupled drift-diffusion and Monte Carlo framework. For gate length (Lg) = 0.2 μm devices with Wg scaled from 200 to 80 μm, the peak ve increases by 10%, leading to higher normalized transconductance (gm) and Id, primarily due to reduced lattice temperature (TL) and the polarization Coulomb field scattering. Meanwhile, the maximum cutoff frequency (fT,max) slightly degrades because the reduced total transconductance (gm,tot) increases the extrinsic delay (τext). These results provide a quantitative transport-based explanation of the Wg-dependent performance in GaN HEMTs.

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Gate-width scaling modulates electron velocity in AlGaN/GaN HEMTs

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Abstract

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