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The aim is to develop highly efficient self-powered UV photodetectors using n-Ga2O3/p-GaN heterojunctions.

Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tunable response time

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Epitaxial heterostructure photodetectors exhibit fast response and tunable detection in UV light, suggesting potential for neuromorphic applications.

The aim is to develop highly efficient self-powered UV photodetectors using n-Ga2O3/p-GaN heterojunctions.
Fabrication of photodetector devices on Si-doped β-Ga2O3 layers grown on p-GaN/sapphire templates using pulsed laser deposition.
Optimization of responsivity, detectivity, and response time by varying Si doping levels and Ga2O3 thickness.
Measurement of the detectors' performance including optical signal sensitivity and response time.
Achieved peak responsivity of 56.8 mA/W and detectivity of 3×10^12 Jones with a 660 nm thick Ga2O3 layer at 8×10^18 cm−3 Si concentration.
Detected optical signals as low as a few nW.
Response time measured in tens of nanoseconds, with a slower component on a millisecond timescale, adjustable via reverse bias.

Biswas et al. (2026) studied this question.

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View Full Paper

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Authors

Epitaxial heterostructure photodetectors exhibit fast response and tunable detection in UV light, suggesting potential for neuromorphic applications.

The aim is to develop highly efficient self-powered UV photodetectors using n-Ga2O3/p-GaN heterojunctions.
Fabrication of photodetector devices on Si-doped β-Ga2O3 layers grown on p-GaN/sapphire templates using pulsed laser deposition.
Optimization of responsivity, detectivity, and response time by varying Si doping levels and Ga2O3 thickness.
Measurement of the detectors' performance including optical signal sensitivity and response time.
Achieved peak responsivity of 56.8 mA/W and detectivity of 3×10^12 Jones with a 660 nm thick Ga2O3 layer at 8×10^18 cm−3 Si concentration.
Detected optical signals as low as a few nW.
Response time measured in tens of nanoseconds, with a slower component on a millisecond timescale, adjustable via reverse bias.

Biswas et al. (2026) studied this question.

View Full Paper

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