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May 6, 2026Advanced Electronic Materials2 citationsOpen Access

High Uniformity in Ferroelectric Capacitors with HfO2/ZrO2 Superlattices

Ferroelectric HfO 2 /ZrO 2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

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Authors

OKOscar KaatranenPEPatrik EskelinenSISampo Inkinen

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Overview

Comparative study shows ferroelectric capacitors with a superlattice improve electrical uniformity across wafers, suggesting better performance in fabrication.

Key Points

  • This research aims to compare the electrical performance uniformity of superlattice (SL) and solid solution (SS) ferroelectric capacitors.
  • Evaluated SL and SS based TiN/HZO/TiN capacitors with a 5.5 nm HZO film on 150 mm wafers.
  • Measured remnant polarization and relative standard deviation (RSD) of electrical characteristics across the wafers.
  • SL capacitors achieved a remnant polarization of 31.5 µC cm−2 with a 2.2% RSD.
  • SS capacitors had a remnant polarization of 27.6 µC cm−2 with a 7.0% RSD.
  • SL configuration indicates lower sensitivity to process variations compared to SS, enhancing uniformity in fabrication.

Cite This Study

Kaatranen et al. (2026) studied this question.

synapsesocial.com/papers/69faa22704f884e66b532cdfhttps://doi.org/10.1002/aelm.202500773
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