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April 13, 20260 citationsOpen Access

AIxGa1−xN (0.7 2

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TJTariq JamilAMAbdullah Al Mamun MazumderMRMafruda Rahman

Key Points

  • The aim is to investigate the properties of high Al-content AlxGa1-xN Schottky barrier diodes with distributed polarization doping.
  • Growth of AlxGa1-xN Schottky barrier diodes on bulk AlN substrate
  • Analysis of rectification behavior and electrical characteristics
  • Measurement of forward current density and breakdown field
  • Achieved a forward current density of approximately 14 kA/cm²
  • Demonstrated a high breakdown field of around 8.3 MV/cm
  • Ideality factor measured at approximately 1.2
  • Schottky barrier height estimated at about 1.7 eV

Abstract

High Al-content AlxGa1-xN (0.7 < x < 1) quasi-vertical Schottky barrier diodes (SBDs) with distributed polarization doping were grown on the bulk AlN substrate. They exhibit excellent rectification behavior with a large forward current density (~14 kA/cm2 ) and a high breakdown field of ~8.3 MV/cm. The SBDs also exhibited low ideality factors of (n~1.2) with a high Schottky barrier height (Φ b~ 1.7 eV). Thus, this study demonstrates the feasibility of the distributed polarization doping approach for high current–high voltage devices.

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Cite This Study

Jamil et al. (2026) studied this question.

synapsesocial.com/papers/69dc89183afacbeac03ead8fhttps://doi.org/10.1063/5.0325830">https://doi.org/10.1063/5.0325830</a></p
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