Una interfase robusta de ferroelectrico-óxido-semiconductor consigue una memoria de bajo consumo energético para computación
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Piush Behera
Suraj S. Cheema
Science
Massachusetts Institute of Technology
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Behera et al. (jue,) estudiaron esta cuestión.
www.synapsesocial.com/papers/6980fd3cc1c9540dea80ef55 — DOI: https://doi.org/10.1126/science.aee4597
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