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La-doped MgO interlayers for robust MOS photodiode response | Synapse
March 3, 2026
La-doped MgO interlayers for robust MOS photodiode response
GS
G. Alan Sibu
VB
V. Balasubramani
DP
D. Siva Priya
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Puntos clave
The addition of La-doped MgO interlayers boosts the sensitivity and responsiveness of MOS photodiodes.
Photodiodes with La doping showed improved performance metrics, achieving a sensitivity increase of over 30%.
Assessment using embedded doped layers demonstrated enhanced operational stability in photodiodes under various conditions.
Findings suggest that incorporating La-doped MgO interlayers could significantly improve photodiode applications in optics.
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Cite This Study
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Sibu et al. (Wed,) studied this question.
synapsesocial.com/papers/69a761d6c6e9836116a2febd
https://doi.org/https://doi.org/10.1016/j.inoche.2026.116370