Synergistic NH 4 F and ZnCl 2 -assisted surface engineering enables efficient red ZnSeTe quantum dots for QLEDs

Puntos clave

• To enhance the efficiency of red-emitting ZnSeTe quantum dots for use in quantum dot light-emitting diodes (QLEDs) through surface engineering techniques.
• Utilized NH4F and ZnCl2 for surface modification of ZnSeTe quantum dots.
• Conducted emission and spatial carrier separation analysis of modified quantum dots.
• Analyzed bandgap properties affected by surface engineering.
• Achieved tunable emission across the visible spectrum in ZnSeTe quantum dots.
• Demonstrated improved spatial carrier separation efficiency in modified quantum dots.
• Evidence of effective bandgap narrowing through band bending in surface-engineered QDs.

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