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April 16, 2026Journal of Materials Chemistry C

Transport characteristics of 2DHG in p-GaN/AlGaN/GaN heterojunction: impact of Mg dopant activation

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Authors

APAnita PatelliGSGabriele SeguiniSVS. Vangelista

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Overview

This work investigates dopant activation and its effects on transport characteristics in a 2DHG system, indicating its significance for semiconductor applications.

Key Points

  • The study aims to explore how Mg dopant activation influences the two-dimensional hole gas characteristics at the p-GaN/AlGaN interface.
  • Analyzed the electrical properties of p-GaN/AlGaN/GaN heterojunctions.
  • Examined the activation level of Mg dopants in different growth conditions.
  • Assessed transport characteristics through electrical measurements.
  • The activation of Mg dopants significantly affects the mobility of the 2DHG.
  • Improved transport characteristics were observed with optimal dopant activation levels.
  • The correlation between dopant activation and hole density was established, indicating enhanced conductivity.

Cite This Study

Patelli et al. (2026) studied this question.

synapsesocial.com/papers/69e07cfa2f7e8953b7cbdf94https://doi.org/10.1039/d5tc04494d
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Also Consider

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  1. 1Parallel 2DHG conduction in AlN/GaN/AlN HEMTs: Leakage mechanisms and electric field distribution2026
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  5. 5Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures2024 · 3 citations