Switching of the Magnetoresistance of a Spin Valve With Planar Magnetic Anisotropy Induced by Spin-Orbit Torque Effect

Spin valves with planar magnetic anisotropy, small interlayer coupling field and the -Ta buffer layer were fabricated by magnetron sputtering. Initiated by a current pulse and caused by the transfer of spin-orbit torque switching between high- and low-resistive states is implemented in micro-objects based on the spin valves. It is shown that the complete rotation of the magnetic moment of the adjacent to the -Ta layer free CoFe layer occurs with a cyclic change in the current in a pulse. The current density required for switching is ≈ 3·10 A/m.