Ab initio quantum transport simulations of the sub-5 nm gate-length two-dimensional β-CuI transistors for advanced nanoelectronics

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Ab initio simulations reveal the performance of sub-5 nm β-CuI transistors in nanoelectronics, indicating potential for advanced applications.

Quantum transport simulations demonstrate the effectiveness of sub-5 nm β-CuI transistors in advanced nanoelectronics.
Key performance metrics indicate superior efficiency at sizes below 5 nm with notable effects on conductivity and switching speed.
Ab initio simulations provide detailed insights into the quantum behavior in two-dimensional β-CuI structures.
The findings highlight the applicability of these transistors in future nanoelectronic devices, suggesting important implications for technology.

Husain et al. (2026) studied this question.

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View Full Paper

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Authors

Ab initio simulations reveal the performance of sub-5 nm β-CuI transistors in nanoelectronics, indicating potential for advanced applications.

Quantum transport simulations demonstrate the effectiveness of sub-5 nm β-CuI transistors in advanced nanoelectronics.
Key performance metrics indicate superior efficiency at sizes below 5 nm with notable effects on conductivity and switching speed.
Ab initio simulations provide detailed insights into the quantum behavior in two-dimensional β-CuI structures.
The findings highlight the applicability of these transistors in future nanoelectronic devices, suggesting important implications for technology.

Husain et al. (2026) studied this question.

View Full Paper

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