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March 18, 2026physica status solidi (b)0 citations

SrTcN 3 Nitride Perovskite: A First‐Principles Investigation of Electronic, Optical, Thermoelectric, Phonon, Thermodynamic, and Mechanical Properties

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NMNisha MahepalTATrilok AkhaniMSMitesh B. Solanki

Key Points

  • This research aims to comprehensively analyze the properties of the nitride perovskite SrTcN3 using first-principles methods.
  • Conducted a first-principles investigation of SrTcN3's properties
  • Analyzed structural, electronic, thermal, optical, phonon, and mechanical characteristics
  • Examined the stability via Goldschmidt tolerance factor and elastic constants
  • Confirmed semiconducting nature with strong Tc 4d–N 2p hybridization
  • Demonstrated high electrical conductivity and favorable Seebeck coefficients for a promising power factor
  • Indicated mechanical robustness and dynamic stability with a high Debye temperature

Abstract

A comprehensive first‐principles study has been conducted on the nitride perovskite SrTcN 3 , focusing on its structural, electronic, thermal, optical, phonon, and mechanical properties. SrTcN 3 crystallises in a monoclinic phase with corner‐sharing TcN6 octahedra and demonstrates thermodynamic and dynamic stability. The Goldschmidt tolerance factor ∼0.98 and elastic constants confirm mechanical robustness. Electronic structure analysis reveals a semiconducting nature, featuring strong Tc 4d–N 2p hybridisation. High electrical conductivity and moderate Seebeck coefficients lead to a promising power factor. Optical properties include a high refractive index, strong absorption, and a static dielectric constant. Phonon dispersion analysis confirms the absence of imaginary modes, indicating dynamic stability, with a high Debye temperature. The combination of mechanical robustness, high Debye temperature, favourable electronic transport behaviour, strong optical absorption, and notable dielectric response positions SrTcN 3 as a theoretically promising multifunctional material, supporting further exploration for high‐temperature semiconducting environments, radiation‐tolerant platforms, and concept‐level dielectric or photonic applications.

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Cite This Study

Mahepal et al. (2026) studied this question.

synapsesocial.com/papers/69ba420a4e9516ffd37a1ebchttps://doi.org/10.1002/pssb.202500453
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