ABSTRACT The work reports the near‐surface doping of N ions, and post implantation effects on the structural, morphological, optical, and electrical properties of Al‐doped ZnO AZO thin film deposited by the Radion Frequency (RF) magnetron sputtering method, investigated at room temperature. The Grazing Incidence X‐ray diffraction (GIXRD) studies revealed the structural modifications caused by the implanted ions. The field emission scanning electron microscopy (FE‐SEM) micrographs showed the morphological modifications in the AZO thin film due to implantation. The crystallinity of the thin film structure was preserved even after high ion implantation of 1 × 10 16 ions/cm 2 . Optical analysis revealed a noticeable decrease in average transmittance in the wavelength range of 350 to 500 nm. An increase in electrical resistivity value was witnessed as a post‐implantation effect.The Fourier Transform Infra Red (FTIR) spectroscopy was employed to study the ion implantation on the vibrational properties. The study shows that the ion implantation method can effectively be used to dope N ions into AZO thin films to tailor their various properties. Nitrogen‐doped AZO thin films, with reduced transmittance in the 350–500 nm range and mid‐gap states, exhibit enhanced ultraviolet (UV) sensitivity, making them ideal for optoelectronic applications.
Sharma et al. (2026) studied this question.