The research aims to investigate the behavior of Dirac carriers in the type-II semimetal NiTe2 and their scattering properties.
Utilized Nuclear Magnetic Resonance (NMR) to observe properties of NiTe2
Analyzed paramagnetic response to assess band ordering variations
Examined the impact of defects on scattering rates of carriers near the Dirac node.
Identified significant differences in scattering rates for Dirac carriers associated with local band ordering variations
Established correlation between defect presence and changes in paramagnetic response
Demonstrated that defects may play a crucial role in the electronic properties of NiTe2.
Abstract
which we show may be attributable to defect driven local variations in band ordering contributing to large differences in scattering rates for carriers close to the Dirac node.