) from 3 V (10 ns) to 7 V (1 µs) raises the peak temperature from approximately 379 K (375 K) to 400 K (396 K). Concurrently, thermal hotspots migrate from the drain/channel junction toward the channel center, attributed to enhanced polarization, higher current density, and redistribution of the electric field. This thermal imbalance, under fixed boundary conditions, limits heat dissipation in the channel center. These findings highlight a trade-off between polarization-induced memory window enhancement and elevated thermal risk, providing valuable insights for the thermoelectric co-design and optimization of Ferro-FinFET-based memory devices.
Ma et al. (2026) studied this question.