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Nanoimprint lithography, a high-throughput, low-cost, nonconventional lithographic method proposed and demonstrated recently, has been developed and investigated further. Nanoimprint lithography has demonstrated 25 nm feature size, 70 nm pitch, vertical and smooth sidewalls, and nearly 90° corners. Further experimental study indicates that the ultimate resolution of nanoimprint lithography could be sub-10 nm, the imprint process is repeatable, and the mold is durable. In addition, uniformity over a 15 mm by 18 mm area was demonstrated and the uniformity area can be much larger if a better designed press is used. Nanoimprint lithography over a nonflat surface has also been achieved. Finally, nanoimprint lithography has been successfully used for fabricating nanoscale photodetectors, silicon quantum-dot, quantum-wire, and ring transistors.
Chou et al. (1996) studied this question.