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Ultra-wide bandgap semiconductors like Ga 2 O 3 , presenting intrinsic spectral selectivity in the UV-C region of the electromagnetic spectrum, are especially well suited for application as solar-blind photodetectors. In this work, photodiodes based on a planar hybrid heterojunction between Ga 2 O 3 and an organic semiconductor are fabricated. Specifically, the photodetectors consist of layers of nominally undoped β-Ga 2 O 3 , κ-Ga 2 O 3 , amorphous Ga 2 O 3 or Si-doped κ-Ga 2 O 3 over which an ink based on heavily doped PEDOT:PSS is directly deposited by aerosol-jet printing. Optimization of the latter process is pursued, ensuring the minimization of overspray and ill-defined features over all the tested layers, especially on the amorphous one, which was found to be the most compatible with this deposition technique. After characterization of the fabricated devices electrical and optoelectronic properties, β-Ga 2 O 3 presents the best lower-bound estimate values of peak responsivity, external quantum efficiency, and a specific detectivity of 4.5⋅10 −2 A/W, 23 % and 3.2⋅10 12 Jones respectively, at a wavelength ( λ ) of 240 nm, along with a UV-C/visible ( λ = 240/400 nm) rejection ratio of 1.6·10 3 . However, as the sputtering deposition process is scalable and inexpensive compared to epitaxial crystal growth, amorphous Ga 2 O 3 emerges as a cost-effective alternative to β-Ga 2 O 3 for solar-blind photodetection. • Self-powered solar-blind planar UV-C photodetectors are fabricated by aerosol-jet printing PEDOT:PSS on Ga 2 O 3 . • The quality of the printed lines of organic conductive ink are optimized by searching for the optimal working parameters. • The performance of the devices fabricated on four different Ga 2 O 3 layers are characterized and critically compared.
Mattei et al. (2025) studied this question.