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Abstract Perovskite quantum dot‐based light‐emitting diodes (QLEDs) have been considered a promising display technology due to their wide color gamut for authentic color expression. Currently, the external quantum efficiency (EQE) for state‐of‐the‐art blue perovskite QLEDs is about 15%, which still lags behind its green and red counterparts (>25%) and blue film‐based LEDs. Here, blue perovskite QLEDs that achieve an EQE of 23.5% at 490 nm is presented, to the best knowledge, which is the highest value reported among blue perovskite‐based LED fields. This impressive efficiency is achieved through a combination of quantum dot (QD) passivation and optimal device design. First, blue mixed halide perovskite CsPbCl 3− x Br x QDs passivated by trifluoroacetate exhibit excellent exciton recombination behavior with a photoluminescence quantum yield of 84% due to reducing uncoordinated Pb surface defects. Furthermore, the device is designed by introducing a mixed hole‐transport layer (M‐HTL) to increase hole injection and transportation capacity and improve carrier balance. It is further found that M‐HTL can decrease carrier leakage and increase radiative recombination in the device, evidenced by the visual electroluminescence spectrum at 2.0 V. The work breaks through the EQE gap of 20% for blue perovskite‐based QLEDs and significantly promotes their commercialization process.
Nong et al. (2024) studied this question.