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The state conversion and terahertz (THz) wave modulation based on a plasmonic device composed of silicon column arrays with vanadium dioxide (VO2) coating were experimentally demonstrated. For double 45° tilted optical pumping, a state conversion from dielectric photonic crystal (PC) to metallic PC was demonstrated due to the insulator-metal transition (IMT) of VO2 with the pump power increasing. In this process, a broadband intensity modulation with 70% modulation depth was achieved. Furthermore, for normally incident optical pumping, another state conversion from dielectric PC to plasmonic device was also demonstrated due to the partial IMT of VO2, and the out of plane PC resonance gradually changed to be plasmonic resonances. This device and its modulation scheme will be of great significance for potential THz applications.
Fan et al. (2013) studied this question.