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January 22, 2026Journal of Materials Chemistry C0 citations

Symmetric transport in sub-5-nm monolayer Sn₂S₂-based homogeneous CMOS devices

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YGYandong GuoYCYe-Wei ChenYHYu-Han Huang

Key Points

  • This research aims to evaluate the performance of sub-5-nm monolayer Sn₂S₂ MOSFETs using quantum-transport simulations.
  • Utilized ab initio quantum-transport simulations to analyze device performance.
  • Examined both n-type and p-type configurations of Sn₂S₂ MOSFETs.
  • Determined the impact of device symmetry on transport properties.
  • Both n-type and p-type Sn₂S₂ MOSFETs achieved promising transport performance.
  • Performance metrics indicate favorable results for scaling down to sub-5-nm devices.
  • Symmetric design contributes positively to overall device functionality.

Abstract

Based on ab initio quantum-transport simulations, we investigate the performance of sub-5-nm monolayer Sn₂S₂ double-gated metal-oxide semiconductor field-effect transistors (MOSFETs). The results reveal that both n-and p-type devices meet the...

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Cite This Study

Guo et al. (2026) studied this question.

synapsesocial.com/papers/6971bd90642b1836717e2355https://doi.org/10.1039/d5tc04303d
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