A CMOS‐Compatible Route to Wafer‐Scale Van der Waals Magnets

ABSTRACT The integration of two‐dimensional (2D) magnetic materials with silicon‐based semiconductor technology is a critical advance for next‐generation electronics, yet it has been fundamentally hampered by the absence of synthesis methods that are simultaneously compatible with back‐end‐of‐line (BEOL) thermal budgets and capable of direct growth on amorphous substrates. Here, we overcome this long‐standing integration barrier by demonstrating, for the first time, the wafer‐scale synthesis of the 2D van der Waals (vdW) magnet FePS 3 , and more broadly, other transition metal phosphorus trisulfides. Our Si‐CMOS compatible, two‐step strategy couples magnetron sputtering of a metal precursor with a precisely controlled phosphosulfurization process at a low temperature of 350°C, enabling the direct growth of high‐quality, uniform crystalline films on amorphous SiO 2 and sapphire substrates. The synthesized films exhibit prominent ferromagnetism with perpendicular magnetic anisotropy and a Curie temperature of approximately 220 K. This work establishes a technologically viable materials platform, poised to accelerate the integration of 2D magnets into advanced spintronic and quantum computing architectures.