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February 2, 2026The Journal of Physical Chemistry Letters

Hard X-ray Photoelectron Spectroscopy for Depth-Resolved Analysis of Optoelectronic and Photoelectrochemical Devices

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Authors

CFChao FengYLYanbo Li

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Overview

This perspective reveals advances in depth-resolved analysis of optoelectronic devices, suggesting new measurement protocols.

Key Points

  • The aim is to highlight advances in hard X-ray photoelectron spectroscopy for analyzing buried interfaces in devices.
  • Laboratory-based hard X-ray photoelectron spectroscopy (HAXPES) used for 20-30 nm probing depths
  • Analytical strategies include multienergy excitation and angle-resolved detection
  • Inelastic-background modeling and Auger-parameter analysis applied for depth-resolved quantification
  • Case studies cover a variety of optoelectronic and photoelectrochemical systems
  • Successfully quantified band offsets, band bending, and interface dipoles in devices
  • Highlighted challenges like limited laboratory photon flux and the need for stable operando cells
  • Identified opportunities for improved measurement protocols and data-driven analysis

Cite This Study

Feng et al. (2026) studied this question.

synapsesocial.com/papers/6980fd18c1c9540dea80ed00https://doi.org/10.1021/acs.jpclett.5c03611
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