This study investigates the stochastic behaviour of the threshold voltage and the effects of weak incubation electric fields on the threshold switching dynamics of GeTe 4 ‐based pore‐type devices. When these devices are excited with pulses of varying rise/fall times of 1 μs and 100 ns, they exhibit a clear first fire threshold voltage of 1.7 V. In subsequent threshold switching cycles, over 60% of events occur within a narrower range of 1.0 ± 0.1 V, indicating consistent threshold switching behaviour. The delay time decreases as the applied voltage increases, although stochastic variations in delay time occur even under identical input voltage conditions. When long trailing edge pulses are applied, the devices display a stable holding voltage of 0.3 V. Additionally, applying a weak priming field of 0.3 V enables threshold switching at nearly 40% lower than the nominal threshold voltage, occurring within 800 ns of the primary switching event. These findings confirm the stochasticity in threshold voltage, delay time, and the role of weak field‐assisted low‐voltage switching characteristics of GeTe 4 ‐based selector devices.
Panneerselvam et al. (Thu,) studied this question.