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February 2, 2026Advanced Functional Materials0 citations

In Situ Electronegativity Control Enables Efficient Near‐Infrared Electroluminescence

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MLMengjiao LiYWYe WangWSWan‐Shan Shen

Key Points

  • The aim is to enhance the efficiency and stability of near-infrared light-emitting diodes using perovskite quantum dots.
  • Utilized nucleophilic reactions with benzoyl halides and long-chain amines.
  • Replenished halide vacancies with electronegative halide ions.
  • Strengthened surface binding by replacing insulating ligands.
  • Conducted structural and spectroscopic analyses to confirm improvements.
  • Achieved an external quantum efficiency of 25.5% in NIR QD-LEDs.
  • Demonstrated efficient defect elimination and reduced non-radiative pathways.
  • Showed improved film conductivity and stability in PQD-based devices.

Abstract

ABSTRACT Perovskite quantum dots (PQDs) are promising emitters for near‐infrared light‐emitting diodes (NIR‐LEDs), yet their efficiency and stability are constrained by halide vacancies and non‐radiative recombination induced by the soft ionic lattice. Here, we report an in situ strategy using nucleophilic reactions‐between highly reactive halide sources (benzoyl halides) and proton‐rich agents (long‐chain amines)‐to release highly electronegative halide ions (X − ). These ions effectively replenish halide vacancies and form stable Pb─X coordination bonds, while simultaneously replacing part of the insulating long‐chain ligands to strengthen surface binding and improve film conductivity. Structural and spectroscopic analyses confirm efficient defect elimination and suppression of non‐radiative pathways. Benefiting from this dual passivation, NIR QD‐LEDs achieve an external quantum efficiency of 25.5%, representing record values for PQD‐based NIR devices. This approach addresses intrinsic lattice instabilities and provides a general route toward efficient and stable perovskite optoelectronics.

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Cite This Study

Li et al. (2026) studied this question.

synapsesocial.com/papers/6980fe48c1c9540dea810398https://doi.org/10.1002/adfm.74284
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