ABSTRACT Relatively few in‐depth studies on MOSFET mobility are published at cryogenic temperatures partially due to lack of appropriate extraction method associated with more complicated scattering mechanisms than at room temperature. This paper, for the first time, proposes a new Y‐function method, which is both physically and engineering novel, for mobility extraction considering the Coulomb scattering that dominates toward cryogenic temperatures. This new Y‐function method demonstrates excellent fit with measurement data taken from foundry fabricated 180 nm bulk MOSFETs for the temperature range from 300 down to 4 K.
Li et al. (Thu,) studied this question.