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February 5, 2026Journal of Materials Chemistry C0 citations

Barrier-Thickness-Engineered Giant Magnetotransport and Multi-Level Storage in a CrTe 2 /Al 2 S 3 Van der Waals Multiferroic Junction

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YZYunlai ZhuKWKe WangCXChaotong Xie

Key Points

  • The aim is to explore the properties of van der Waals multiferroic tunnel junctions for memory applications.
  • Fabrication of CrTe2/Al2S3 multiferroic junctions
  • Experimental measurement of tunnel magnetoresistance and electroresistance
  • Analysis of memory performance characteristics
  • Demonstrated enhanced magnetotransport properties in the junctions
  • Achieved multiple levels of storage performance
  • Highlighted potential for low-power, non-volatile memory solutions

Abstract

Van der Waals multiferroic tunnel junctions (MFTJs), which combine tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) effects, are promising building blocks for next-generation, low-power non-volatile memory. In this work, we...

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Cite This Study

Zhu et al. (2026) studied this question.

synapsesocial.com/papers/6984346ff1d9ada3c1fb2891https://doi.org/10.1039/d5tc04126k
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