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February 5, 2026Journal of Materials Chemistry C0 citations

Pentafluorophenyl end-capped bithiophene imide (BTI) based n-type semiconductors for organic thin-film transistors

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DGDeebakkrishnan GanesanHKHwijoong KimYLYuqi Li

Key Points

  • The aim is to synthesize and evaluate the performance of fluorinated bithiophene imide-based semiconductors for n-type applications.
  • Synthesis of two fluorinated bithiophene imides, DFP-BTI-b8 and DFP-BTI-b16.
  • Characterization of n-type performance through mobility and current on/off ratio measurements.
  • Achieved mobilities of up to 0.10 cm²/V·s.
  • Demonstrated current on/off ratios exceeding 10⁶.

Abstract

Two fluorinated bithiophene imide-based semiconductors, DFP-BTI-b8 (1) and DFP-BTI-b16 (2), were synthesized and exhibit excellent n-type OTFT performance with mobilities up to 0.10 cm 2 V −1 s −1 and current on/off ratios over 10 6 .

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Cite This Study

Ganesan et al. (2026) studied this question.

synapsesocial.com/papers/698435f0f1d9ada3c1fb565bhttps://doi.org/10.1039/d5tc04019a
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