Counter-Doping in Two-Dimensional Transition-Metal Dichalcogenides: Flipping Native Polarity and Beyond

Key Points

• The central aim is to explore doping methods for controlling carrier types in two-dimensional TMDs.
• Analyzed the electronic properties of various TMDs
• Evaluated the effects of counter-doping on carrier concentration
• Investigated the influence of structural modifications on polarity
• Counter-doping successfully shifted native polarity in TMDs
• Achieved enhanced control over carrier concentration
• Highlighted potential for improved performance in nanoelectronic devices