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February 19, 2026Materials Advances0 citationsOpen Access

Aqueous HF-HBrO 4 Solutions for Wet-Chemical Etching of (100) Silicon Wafer Surfaces

NSN. SchubertNZNiklas ZomackASAndré Stapf

Key Points

  • The research aims to evaluate the effectiveness of HF and HBrO4 mixtures for wet-chemical etching on silicon surfaces.
  • Conducted experiments with aqueous solutions of HF and HBrO4.
  • Measured etching efficiency on (100) silicon wafer surfaces.
  • Analyzed results to determine the effectiveness of the mixtures.
  • Achieved effective etching of silicon wafer surfaces without nitrogen oxide emissions.
  • Demonstrated that HF-HBrO4 mixtures provide a polishing effect on silicon.

Abstract

Aqueous solutions of hydrofluoric acid (HF) and perbromic acid (HBrO4) are investigated as nitrogen oxide (NOx)-free mixtures for wet-chemical etching of (100) silicon wafer surfaces. Such mixtures are polishing silicon...

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Cite This Study

Schubert et al. (2026) studied this question.

synapsesocial.com/papers/6996a8e3ecb39a600b3f017ehttps://doi.org/10.1039/d5ma01429h
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