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Explore how aliovalent gallium dopants affect Ti3+ defects and water oxidation properties in LaTiO2N.

February 28, 2026Journal of Materials Chemistry A0 citations

Aliovalent gallium dopants remove Ti 3+ defects and improve photocatalytic and photoelectrochemical water oxidation properties of LaTiO 2 N

LWLi Wang RKRajesh Kandel MSMahya Salmanion

Key Points

Explore how aliovalent gallium dopants affect Ti3+ defects and water oxidation properties in LaTiO2N.
Utilized electron paramagnetic resonance (EPR) to analyze defects.
Employed X-ray photoelectron spectroscopy for material characterization.
Conducted optical absorption measurements to evaluate light interaction.
Applied surface photovoltage spectroscopy to assess photogenerated charge.
Aliovalent gallium dopants successfully suppressed Ti3+ recombination defects.
Enhanced photocatalytic and photoelectrochemical water oxidation properties were observed with doping.
Improvements in electron transport and light absorption efficiency were noted.

Abstract

Ti 3+ recombination defects in LaTiO 2 N can be suppressed with aliovalent gallium (Ga 3+ ) dopants, as confirmed with electron paramagnetic resonance (EPR), X-ray photoelectron, optical absorption and surface photovoltage spectroscopy.

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