The electronic structure of single-walled chiral GaN (8, n) nanotubes, where n = 1–7, has been investigated using the nonempirical relativistic augmented cylindrical wave method. It is established that all systems are semiconductors with a band gap of 1–2 eV. The spin-orbit splitting amounts to 3–13 meV for the valence band top and 1–10 meV for the conduction band bottom. The highest spin selectivity efficiency is observed in (8, 1) and (8, 2) nanotubes, where dominant α-transport and high spin-orbit splitting (10 meV) create optimal conditions for spin filters.
V.B. Merinov (Wed,) studied this question.