In today's rapidly advancing technological landscape, the use of semiconductors and the associated research on the development of advanced electronic and optoelectronic devices have gained considerable importance. Among these, organic-based semiconductors have emerged as a focal point in recent years due to their promising characteristics. Organic polymers, in particular, are preferred in the field of semiconductor technology owing to several advantages such as low-temperature processing, cost-effective fabrication methods, and the potential for high-efficiency electronic device performance. In this study, metal-polymer-semiconductor (MPS) type Schottky Barrier Diodes (SBDs) were fabricated using the next-generation organic polymer PTB7 and the additive material PCBM in two different weight ratios: 1:1 and 2:1. The electrical properties of the fabricated diodes were systematically investigated by analyzing the ideality factor (n), barrier height (ΦB), and series resistance (Rs) under different environmental and operational conditions. These analyses were carried out under dark conditions, under illumination with an irradiance of 1000 W/m², and across a temperature range of 200 K to 325 K in 25 K intervals. The results aim to contribute to a deeper understanding of the performance and potential applications of PTB7:PCBM-based Schottky diodes in future organic electronics
Şağban et al. (Fri,) studied this question.