Saturation of Optical Gain in Green Laser Diode Structures as Functions of Excitation Density and Excitation Length

In this study, the optical gain characteristics of a green laser sample based on a III-Nitride InGaN single-quantum-well structure were investigated. The Green gap phenomenon, caused by bandgap fluctuations due to inhomogeneous indium composition and the quantum-confined Stark effect (QCSE), has been a major obstacle in achieving high efficiency and high output in green-light-emitting devices. To address these issues, a sample grown on a (0001)-oriented GaN substrate with a single-quantum-well active layer was fabricated to suppress In composition non-uniformity and enhance the overlap of electron and hole wavefunctions. The optical gain behavior was analyzed using the Variable Stripe Length Method (VSLM) under various excitation densities and stripe lengths (Lcav). The results showed that as the stripe length increased, the spectral linewidth decreased and stimulated emission occurred at lower excitation densities. However, excessive cavity length led to gain saturation and a red shift in the peak wavelength due to Joule heating effects. These findings provide essential insights for determining the optimal cavity length in laser diode fabrication and are expected to serve as fundamental guidelines for improving the efficiency and output power of III-Nitride-based green laser diodes.