Interface engineering of Schottky contacts in 2D VX2/SiS2 (X = S, Se) heterostructures via strain and electric field: manipulating barrier height and quantum tunneling behavior

Key Points

• Barrier height manipulation enhances quantum tunneling effects, optimizing device performance.
• Electric field and strain can effectively tune the Schottky contacts in 2D materials like VX2/SiS2.
• Analysis using advanced theoretical models to evaluate the impact of strain and electric fields on heterostructures.
• Findings may lead to improved electronic devices utilizing 2D materials for practical applications.