In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSDs) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky barrier diodes (SBDs) and p-NiO/Ga2O3 heterojunction diodes (HJDs). The JBSDs achieved breakdown voltages exceeding 1.8 kV along with low leakage currents (10−2 A/cm2), while displaying a low turn on voltage (VON) of ∼1 V, which is similar to that of planar Ni/Ga2O3 SBDs. The fabricated devices showed excellent forward characteristics with low differential on-resistance (Ron,sp) ranging from 4 to 10.5 mΩ cm2, for fin width between 0.6 and 1.25 μm. The best performing device with fin width of 0.85 μm showed a unipolar figure of merit of ∼0.7 GW/cm2. This work showcases the benefits of trench JBS design along with SM-JTE edge-termination for efficient high-performance kilovolt-class β-Ga2O3 diodes.
Gilankar et al. (Wed,) studied this question.