Modelling of quantum transport in monolayer MoS2 Photo-MOSFET as high-performance nano-electronic devices

Key Points

• High-performance nano-electronic devices were achieved through quantum transport modeling.
• The analysis shows substantial improvements in performance metrics for monolayer MoS2 devices.
• Assessment using quantum transport simulations offered insights into device functionality.
• Highlights the promising application of MoS2 in developing advanced electronic technologies.