Analytical Modeling and Performance Evaluation of Nanoscale Tri-Material Tri-Gate MgZnO/ZnO HEMTs on Silicon Substrate for Enhanced Short-Channel Suppression and Carrier Transport

Key Points

• Enhanced carrier transport leads to improved electronic performance in nanoscale devices.
• The evaluation demonstrates the effectiveness of short-channel suppression in tri-material structures.
• Analytical modeling reveals insights into the performance of tri-gate MgZnO/ZnO HEMTs.
• Further exploration of nanoscale technologies may yield practical improvements in semiconductor devices.