Enhanced optoelectronic properties of HfO2/ZnO van der Waals heterostructure: A first-principles study for next-generation applications

Puntos clave

• Optoelectronic properties show significant enhancement in the HfO2/ZnO heterostructure, optimizing performance for next-generation devices.
• The study finds that the dielectric constant and conductivity improve, leading to better device efficiency and application potential.
• Analysis uses first-principles calculations to model the interactions and properties of these layered materials in depth.
• Findings may enable the development of next-generation optoelectronic devices based on van der Waals heterostructures.