Ultrawide-bandgap diamond/ε-Ga2O3 pn heterojunction for self-powered solar-blind photodetection and high-temperature operation

Key Points

• Self-powered operation is achieved with the diamond/ε-Ga2O3 pn heterojunction, showcasing potential for advanced photodetection.
• Solar-blind photodetection is demonstrated, effectively filtering out unwanted wavelengths and enhancing selectivity.
• High-temperature operation is feasible, allowing for applications in extreme environments and improving device resilience.
• Efficient energy conversion is observed, emphasizing the advantages of ultrawide-bandgap materials in sensor technology.