Self-powered Ge 2 Sb 2 Te 5 on n-Si photodiode for UV–Vis detection fabricated by Pulsed Laser Deposition

Puntos clave

• Self-powered photodiodes exhibit enhanced UV-Vis detection capabilities, crucial for optical applications.
• The photodiode achieves a detection performance improvement with Ge2Sb2Te5 material integration.
• Pulsed laser deposition was utilized to fabricate the photodiodes, ensuring high-quality thin films.
• This work highlights significant advancements in UV detection technology that may lead to practical sensor applications.