Dynamic behavior of the UTBB FDSOI MOSFET for high frequency and low power integrated circuits (https: //www. mos-ak. org/grenoble₂015/presentations/T11ElGhouliMOS-AKGrenoble₂015. pdf)

Key Points

• High frequency operation of UTBB FDSOI MOSFET allows for efficient performance in low power applications.
• The research reveals that the UTBB FDSOI architecture enhances the scalability of integrated circuits.
• Analyzing the dynamic behavior of these MOSFETs could lead to improved power efficiency.
• The findings may support advancements in the design of modern electronic devices.

Abstract