Recovery Methods of Gallium Nitride Plasma Etch Damage

Key Points

• Effective recovery methods for gallium nitride plasma etch damage were identified and validated.
• The analysis showed that specific recovery techniques can significantly enhance surface quality.
• Detailed examination of plasma etching processes provided insights into damage mechanisms and recovery strategies.
• These findings may improve the durability and performance of gallium nitride devices, supporting further developments in semiconductor technology.

Abstract