Dependence of single-pulse avalanche ruggedness in μH inductor circuit on SiC MOSFETs structure

Puntos clave

• Single-pulse avalanche ruggedness highly depends on the structure of SiC MOSFETs involved in the circuit.
• Key evidence shows significant variations in ruggedness metrics across different SiC MOSFET designs.
• Observational analysis on the performance of μH inductor circuits utilizing various SiC MOSFET configurations.
• The findings highlight the need for tailored designs to enhance circuit performance and reliability.