Ab initio quantum transport simulations of the sub-5 nm gate-length two-dimensional β-CuI transistors for advanced nanoelectronics

Key Points

• Quantum transport simulations demonstrate the effectiveness of sub-5 nm β-CuI transistors in advanced nanoelectronics.
• Key performance metrics indicate superior efficiency at sizes below 5 nm with notable effects on conductivity and switching speed.
• Ab initio simulations provide detailed insights into the quantum behavior in two-dimensional β-CuI structures.
• The findings highlight the applicability of these transistors in future nanoelectronic devices, suggesting important implications for technology.